I did research in the field from 2008 to 2013. The claims are always the same: faster than flash, denser than dram, lower power than both. Here's how to spot BS: first, the density claims are immaterial until they prove yield at a technology node same as dram's today. There are multiple billions investment between 180nm and high yield (and low mask count) 2xnm, no matter how cool is the new memory technology. Second,…
Actually you should be taking the claims very seriously. This has been an area Micron has been researching for decades. They've had a patent on the memory cell for about 11 years now (US6777705). Phase change memory has for a very long time been one of those just over the horizon technologies, but Micron has perfected it well enough to compete with NAND and partnered with Intel to bring it to market. This isn't somet…
Re the latency caveat I was suggesting BS spotting rules. You're right that this article did not claim the memory was faster than dram.
RE power consumption, it's true that it you don't use it an NVM will not consume power, yet that is not what people refer to when talking about power consumption. Can you quote a technology paper that shows lower than dram, or lower than flash for that matters, active power consumption? (The proper unit is W/GBps here)