Earlier quoted context omitted.
Find that lately there are less of this kind of Hacking articles and those talking about interesting and inusual things, and much more about New frameworks or libraries.
I went back into the archive and tried to run into a hardware hacking post before a framework post. It went, startup, startup, Google buys YouTube, startup, startup, then this https://news.ycombinator.com/item?id=1981 (2694 days ago). I couldn't find evidence that this site cut its teeth on hardware hacking.
Show HN: A high-speed laser camera trigger for under $2
21–29 of 29 posts
Re: Show HN: A high-speed laser camera trigger for under $2
#22This post completely sums up what makes HN great.
Re: Show HN: A high-speed laser camera trigger for under $2
#23$2 sounds really cheap--did I miss the laser on the bill of materials? Anyone else hoping for a modern and inexpensive replacement for the legendary classic EG&G microflash?
Re: Show HN: A high-speed laser camera trigger for under $2
#24Gotta wonder about the schematic, looks like it's wrong. The battery and the cathode of the opto is not connected correctly.
Re: Show HN: A high-speed laser camera trigger for under $2
#25This is an awesome post, I love seeing these kind of projects. The money shot at the end with the BB is very cool. Nice job!
Re: Show HN: A high-speed laser camera trigger for under $2
#26Did something very similar for a final project in a physics/electronics course. https://www.dropbox.com/s/ox5wxmnhzg045b4/Final.pdf
Re: Show HN: A high-speed laser camera trigger for under $2
#27Earlier quoted context omitted.
I picked up a 1 mW pointer for £1.98 on eBay. That's about $3.38 USD.
> I’m only including the cost of components, and not things like cables, breadboards or the laser pointer (or flash).
"I'll do this for free, not including my hourly or the cost of materials"
Re: Show HN: A high-speed laser camera trigger for under $2
#28Earlier quoted context omitted.
Looks correct to me. The idea is to trigger in the absence of the laser---i.e., when the beam is broken by a projectile. When the laser shines on the base of the phototransistor, the transistor pulls current from the node between the two resistors. Assuming the laser causes sufficient electron-hole pair generation in the base, the transistor can pull a bit more than 1mA (5V/4.7k) from the battery; the photodiode insi…
>the transistor pulls current from the node between the two resistors The battery is connected incorrectly for this scenario to work. Node 2 of R2 should be connected to the positive battery terminal for correct flow to the LED. >the phototransistor's collector won't pull much closer than a couple hundred millivolts to its emitter while conducting that much current The transistor won't operate like that given the way…
You're probably right about the datasheet for the opto, but that neither clashes with my statement ("most optocouplers") nor invalidates the broader point (Vcesat is ~300mV; the diode is most definitely off).
Aside: I spent several years as the lead engineer on a line of digital isolators (modern replacements for optocouplers: CMOS integrated circuits with much higher speed, better immunity to common-mode transients, and no need to use expensive and generally boutique processes supporting LEDs). Most of the time, opto manufacturers oversell the capabilities of their optos at low voltage, and generally speaking in industrial applications optocouplers are driven much harder than the currents at which forward drop numbers are quoted in datasheets.
Aside #2: bipolar transistors absolutely do operate upside-down! Reverse beta is usually far worse than forward beta, because the collector region tends to be much larger than the emitter and as a result there is substantial carrier recombination.
In fact, when you want to use a bipolar transistor as a low drop switch, and if you don't care how much base current you have to use to do it, running the transistor upside-down tends to result in lower drop and faster operation. There are a few reasons for this, but it boils down to this: the speed of the bipolar transistor as a switch is limited by charge storage in the base when the device is saturated, or more precisely, the amount of time it takes to remove this charge when trying to turn the device off. The base-collector diode behaves differently than the base-emitter diode because of the difference in emitter and collector doping. As a result, when upside-down, the base-collector junction stores much less charge, the lower beta actually means that the charge is removed faster, and the higher forward drop of the base-emitter diode means that reverse Vcesat is lower than the forward Vcesat.
The downside, to which I alluded above, is 10x or more base current to actually drive the transistor. Depending on the quantum efficiency of this phototransistor and its reverse beta, were the OP to use the phototransistor upside-down in this circuit, it might not be able to shunt sufficient current to keep the optoisolator off.
Re: Show HN: A high-speed laser camera trigger for under $2
#29Did something very similar for a final project in a physics/electronics course. https://www.dropbox.com/s/ox5wxmnhzg045b4/Final.pdf