Perhaps title had a typo?
fluorographane -> Fluorographene
Can't find a single page about fluorographane
https://en.wikipedia.org/w/index.php?search=fluorographane&t...
But this
447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
11–20 of 169 posts
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#12"A scanning-probe prototype already constitutes a functional non-volatile memory device with areal density exceeding all existing technologies by more than five orders of magnitude."
Does that mean a scanning tunneling microscope is the I/O mechanism? That's been demoed for atom-level storage in the past. But it's too slow for use.
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#13Perhaps title had a typo? fluorographane -> Fluorographene Can't find a single page about fluorographane https://en.wikipedia.org/w/index.php?search=fluorographane&t... But this https://en.wikipedia.org/wiki/Fluorographene
Not a typo. Fluorographene is the sp² form (Nair et al. 2010). Fluorographane uses the -ane suffix to denote full sp³ saturation — same convention as graphene → graphane. The sp³ hybridization is what creates the bistable C-F orientation that stores the bit.
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#14"A scanning-probe prototype already constitutes a functional non-volatile memory device with areal density exceeding all existing technologies by more than five orders of magnitude." Does that mean a scanning tunneling microscope is the I/O mechanism? That's been demoed for atom-level storage in the past. But it's too slow for use.
Yes, Tier 1 is scanning probe — C-AFM specifically. Slow but sufficient for proof of concept. The paper describes a Tier 2 architecture using near-field mid-IR arrays for parallel read/write, projecting 25 PB/s aggregate throughput. Tier 1 proves the physics. Tier 2 is the engineering path to speed.
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#15Sniff test: a paper with a single author and 53 revisions, listing a gmail address as contact information despite the author, after a brief internet search, appearing to have affiliations with CSU Global, (maybe) the University of Central Florida, and the San Jose State University Department of Aerospace.
Author here. Three PhDs (Mathematics, Pisa; Quantum Chemistry, UCF; Materials Science, UTD — in progress), plus MS degrees from SJSU and CSU. The gmail is because this is independent work, not affiliated with any institution. v53 reflects thirteen years of development since the original 2013 publication (Graphene 1, 107–109). The barrier is verified at two independent levels of theory with a confirmed transition stat…
That’s amazing. Do you have a home lab with an atomic microscope where you do your research?
And what’s the reason for going solo vs a research university, where I assume this type of research could be significantly sped up?
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#16Earlier quoted context omitted.
Author here. Three PhDs (Mathematics, Pisa; Quantum Chemistry, UCF; Materials Science, UTD — in progress), plus MS degrees from SJSU and CSU. The gmail is because this is independent work, not affiliated with any institution. v53 reflects thirteen years of development since the original 2013 publication (Graphene 1, 107–109). The barrier is verified at two independent levels of theory with a confirmed transition stat…
Have you considered subjecting this to expert scrutiny by submitting to a journal? That's probably better than getting hot takes on HN by random technology enthusiasts, skeptics, anon experts, and trolls.
Realistically I don't see how this could be submitted to a journal as-is.
I'm sure you could take this material and write a couple papers out of it, but right now this is a 60 page word document with commentary on a variety of topics from memory market economics to quantum computing.
It's full of self-congratulatory language like "The transition is not an incremental improvement within the existing paradigm; it obsoletes the paradigm and the infrastructure built around it". Alright, I'm happy to believe that this work is important. But this is not the neutral tone of a scientific article, it reads like ad copy for a new technology.
I'm sure there's interesting physics in there, but it needs a serious editing effort before it could be taken seriously by a journal.
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#17Perhaps title had a typo? fluorographane -> Fluorographene Can't find a single page about fluorographane https://en.wikipedia.org/w/index.php?search=fluorographane&t... But this https://en.wikipedia.org/wiki/Fluorographene
Not a typo. Fluorographene is the sp² form (Nair et al. 2010). Fluorographane uses the -ane suffix to denote full sp³ saturation — same convention as graphene → graphane. The sp³ hybridization is what creates the bistable C-F orientation that stores the bit.
TIL thanks!
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#18Sniff test: a paper with a single author and 53 revisions, listing a gmail address as contact information despite the author, after a brief internet search, appearing to have affiliations with CSU Global, (maybe) the University of Central Florida, and the San Jose State University Department of Aerospace.
Sniff test as in you turned your nose up without even looking at it on a purely surface level based on affiliation.
Smells like laziness to me.
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#19Earlier quoted context omitted.
Author here. Three PhDs (Mathematics, Pisa; Quantum Chemistry, UCF; Materials Science, UTD — in progress), plus MS degrees from SJSU and CSU. The gmail is because this is independent work, not affiliated with any institution. v53 reflects thirteen years of development since the original 2013 publication (Graphene 1, 107–109). The barrier is verified at two independent levels of theory with a confirmed transition stat…
That’s amazing. Do you have a home lab with an atomic microscope where you do your research? And what’s the reason for going solo vs a research university, where I assume this type of research could be significantly sped up?
No lab — the work is computational. All calculations run on a Dell Precision workstation with ORCA (quantum chemistry) software. An experimental collaborator is now preparing the C-AFM validation. The solo approach is a consequence of the work spanning multiple fields that don't share a single department.
Re: 447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
#20Earlier quoted context omitted.
Have you considered subjecting this to expert scrutiny by submitting to a journal? That's probably better than getting hot takes on HN by random technology enthusiasts, skeptics, anon experts, and trolls.
Realistically I don't see how this could be submitted to a journal as-is. I'm sure you could take this material and write a couple papers out of it, but right now this is a 60 page word document with commentary on a variety of topics from memory market economics to quantum computing. It's full of self-congratulatory language like "The transition is not an incremental improvement within the existing paradigm; it obsol…
The paper has been under peer review at Physica Scripta (IOP) since March 25. The reviewers will decide what stays and what's trimmed. You're reading a preprint, not the final version. The tone in the architecture sections reflects the scope of the claim — reviewers may ask me to moderate it, and I will. The core physics (Sections 2–3) is standard computational chemistry: DFT, transition state optimization, CCSD(T) validation. Those sections read like any other ab initio paper.