Live data from Hacker News

Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

spectrum.ieee.org

11–20 of 131 posts

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#11
post #6
post #4

Earlier quoted context omitted.

Keep in mind, these are layers of cells, not multi-level cells. Each of the layers has an individual multi-level cell. That said, Samsung quad-level cells only have 1k write lifetime, so likely not far off.

I love how someone said there's a septuple-level cell out there... but you have to immerse it in liquid nitrogen for it to work.

PLC NAND is already on the way to commercial hardware.

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#12

At what point will the wear resistance be so low from increasing the layers (and bits) per cell that flash becomes effectively write-once, read many (WORM)?

Increasing layers should cause roughly zero problems. As far as bits per cell, 4 already gives you very slow writes and not a lot of them. Let's say that maxes out at 5 or 6.

Thermals? SSDs have slowly but surely increased in TDP.

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#14
A much better article on Anandtech [1]. Dual Stack 116 Layers. And as noted inside the article 100+ layer per stack isn't exactly new.

Personally I am interested in Cost per Bit reduction. Hopefully there will be news in Flash Memory Summit new week. I wouldn't mind to have a slow 100 write cycle NAND that cost a third of today's price. Think 2TB USB Stick for $49.

[1] https://www.anandtech.com/show/17509/microns-232-layer-nand-...

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#15
post #7
post #4

Earlier quoted context omitted.

Keep in mind, these are layers of cells, not multi-level cells. Each of the layers has an individual multi-level cell. That said, Samsung quad-level cells only have 1k write lifetime, so likely not far off.

Remember, even 1000 writes means roughly 3Y of full drive writes per day with the naïve wear leveling and the most brutal write load. For most write loads the drives made of this kind of NAND can be easily warranted for 3Y.

1k writes sounds good enough for consumer hardware I suppose. As long as there's some some type of S.M.A.R.T. system to warn the user before it wears out.

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#16
post #4

At what point will the wear resistance be so low from increasing the layers (and bits) per cell that flash becomes effectively write-once, read many (WORM)?

Keep in mind, these are layers of cells, not multi-level cells. Each of the layers has an individual multi-level cell. That said, Samsung quad-level cells only have 1k write lifetime, so likely not far off.

Yeah they are going to stacked cells because the endurance is so bad at smaller process nodes.

SSD prices have stalled for quite a while. By now they should be getting in shouting distance of hard drives but unfortunately memory makers are much more of a colluding trust than Hard Drive manufacturers.

What I really want is a high-lifetime write medium to go with SSDs. Hard disks aren't really it. It's too bad the DVD/CD form factor/drive died with high speed internet, holographic storage would have been great. But there was no investment/demand to push it.

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#17
post #7

Earlier quoted context omitted.

Remember, even 1000 writes means roughly 3Y of full drive writes per day with the naïve wear leveling and the most brutal write load. For most write loads the drives made of this kind of NAND can be easily warranted for 3Y.

1k writes sounds good enough for consumer hardware I suppose. As long as there's some some type of S.M.A.R.T. system to warn the user before it wears out.

usually it goes into read-only mode when it wears out, so there's no data loss.

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#18
post #14

A much better article on Anandtech [1]. Dual Stack 116 Layers. And as noted inside the article 100+ layer per stack isn't exactly new. Personally I am interested in Cost per Bit reduction. Hopefully there will be news in Flash Memory Summit new week. I wouldn't mind to have a slow 100 write cycle NAND that cost a third of today's price. Think 2TB USB Stick for $49. [1] https://www.anandtech.com/show/17509/microns-232…

I suspect it would be difficult to properly balance writing across blocks with only 100 cycles before wearout.

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#19

Earlier quoted context omitted.

Increasing layers should cause roughly zero problems. As far as bits per cell, 4 already gives you very slow writes and not a lot of them. Let's say that maxes out at 5 or 6.

Thermals? SSDs have slowly but surely increased in TDP.

Flash likes to run pretty hot and we still rarely attach heat sinks, even less often proper heat sinks with fins. There's a lot of headroom.

And if your main goal is capacity you could decide to just not run it faster, which will avoid basically all the extra heat.

Re: Micron's 232-layer NAND enables 2TB flash chips that deliver data 50% faster

#20
post #14

A much better article on Anandtech [1]. Dual Stack 116 Layers. And as noted inside the article 100+ layer per stack isn't exactly new. Personally I am interested in Cost per Bit reduction. Hopefully there will be news in Flash Memory Summit new week. I wouldn't mind to have a slow 100 write cycle NAND that cost a third of today's price. Think 2TB USB Stick for $49. [1] https://www.anandtech.com/show/17509/microns-232…

That would be a death knell for hard drives if they could actually get it that cheap (~$25/TB). In addition to obvious benefits for consumers, More and more in the enterprise space (which is the dominant buyer of HDD unit purchase volume) HDD's are being regulated to write few, read lots if not outright WORM, and focused on Sequential speeds. You can knock an order of magnitude of speed off modern NAND Flash and still compete with spinning disks on sequential speed and have a few more orders of magnitude to shave off of Random I/O. It wouldn't kill HDD's overnight, but it would definitely give them a definitive terminal diagnosis.

I would love that. I doubt that's what they're doing, but I would love that.

Post reply on HN