To be perfectly clear: the 1000x claim isn't about throughput , but latency . The graph in the article makes this clear: spinning drives have latencies on the order of 10ms, NAND flash about 10us, and DRAM about 1ns. The claim is that Optane will achieve latencies on the order of 10ns, or 1000x better than NAND. The on-stage benchmark shows a write throughput of about 2GB/s, which is a much more modest improvement ov…
DRAM does not have 1ns latency! On a 4ghz skylake chip you can access the L1 cache at 1ns. DRAM is going to be more in the range of 60(local)-100(remote) nanoseconds. Optane will likely be > 300ns latency from what I've heard, if you access it directly through the CPU memory controller via loads and stores, which is still very impressive.
CAS latency for DDR3-3300 is less than 1/3ns, according to the article below. If Intel's new Optane memory can achieve addressing on the order of 10ns, it will be very competitive with DRAM, since all of other overhead along the data path ought to be similar.