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Samsung Foundry Forum announcements

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Re: Samsung Foundry Forum announcements

#3
post #2

At what point does quantum tunnelling become a problem?

Quantum tunnelling has already become a problem in most computer components. NAND flash was the first in maybe 2015 to start reporting seeing issues?

Effects are moderately visible and have to be counteracted at 5nm. I heard some rumours about 7nm, but cannot confirm any countermeasures were taken to avoid quantum effects.

It should be noted that "3nm" is now purely for commercial reasons and has no relationship to the size of transistors on board.

Re: Samsung Foundry Forum announcements

#8
post #2

At what point does quantum tunnelling become a problem?

First though, "5nm", "3nm" and so on are just marketing names. There is nothing about "5nm" that makes it "5nm" other than the company in question saying it is. Some things are smaller than 5nm on a given 5nm node, and some are larger. I cannot recall exactly what node this started to be the case (there used to be an actual definition, one for DRAM, one for logic), but it was in the past two decades and got particularly ridiculous beginning around "28nm" up to now. The really concerning physical dimension for quantum tunneling to occur/not occur is "gate length," and that's been basically sitting around ~16nm (actual, real, literal 16nm), plus or minus a few nanometers (depending on the manufacturer and process in question), since about "45nm" (mid-late 2000s). So that one critical dimension isn't getting smaller. And there isn't much they can do about it right now. They are still shrinking other dimensions though, and things don't work like they used to. Powered off transistors aren't really off, and leak power. The workaround for this is that they just use bigger transistors in certain places for what's called "power gating". You get the benefits of having tons of small transistors, with a slight area penalty. In addition to power gating, they have made substantial improvements to the design of the transistors themselves. Gates now wrap around the channel on 3 sides, creating a device known as a Finfet. Silicon dioxide is no longer used as an insulator to the same extent -- hafnium dioxide preforms much better as an insulator. Gates are now metal instead of polysilicon. And there's an assortment of other changes that have occurred or are on the way. So performance has actually managed to improve somewhat, and things have still gotten smaller. The end is near... but not quite yet. Gate length is not going to budge much unless some miracle occurs, though.
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