So bad, had to stop reading.
>> cubic crystal lattice that allows electrons to move within the lattice under certain voltage conditions. But it doesn’t allow similar movement for photons, and that’s why light can’t move through silicon easily.
Uhhh.. not really. I’ll try to explain (forgive my ad-lib MatSci from 20 years ago). Efficient light generation is a matter of direct or indirect bandgap. A direct transition is one where the electron wave number is unchanged in dropping from the high to low energy state, so it can be completed with a single photon (light). An indirect transition fails conservation of energy and momentum with one photon, so it requires phonon (heat) interactions. Semiconductors have an energy gap between the highest few occupied state and the lowest few unoccupied states, and these are the only states that can exchange energy. Direct transitions generate mostly photons, so even if it gets absorbed, it will get re-emitted intact until it leaves the material. Indirect transitions means that phonons remove energy each time, so it all becomes heat. In normal conditions, Indirect materials are more transparent, although direct materials can become transparent by population inversion, which is when there are more electrons in the high-energy states then the low-energy states for the bandwidth of the photons being generated. Then any photon generated is more likely to generate more photons on its way out (stimulated emission) than to be absorbed. This is what you want. Okay I’ll stop now, but there are tricks that you can use to get this behavior in silicon, an indirect-bandgap material, which is the topic of the article.