"At 9nm, IBM’s transistor is also smaller than the physical limit of silicon transistors, which is around 11nm." Can anyone cite a source for that statement regarding the theoretical minimum size of silicon transistors?
According to the Wikipedia article about the 11nm node, the thickness of the gate dielectric becomes just 1 atom at that scale: http://en.wikipedia.org/wiki/11_nm
Re: IBM creates 9nm carbon nanotube transistor that outperforms silicon
#31Although Intel mentioned recently that they think they can make it to 8nm