Earlier quoted context omitted.
Adding to this, from what I’ve read electron beam is too slow for the required throughput. The ASML EUV machine can etch something like 170 wafers per hour. Using an electron beam would be far too slow for 2-3 wafers per minute.
It would be interesting to see if this tech was viable for dev boards. i.e. when you want to design a new 2nm chip, what if you were using electron beam chips to test out designs?
It also doesn't tell you as much about how your design actually runs on the process in question.