Earlier quoted context omitted.
Where did I imply that they should use an incorrect underestimation of row disturbance? If they actually measured these things, they'd know how far away a disturbance can be created before it becomes so weak the normal refresh cycle fixes it.
It is not feasible for DRAM (or the memory controller) to maintain a fully accurate simulation of DRAM. If it was easy they'd have done it.
Or refresh the whole thing after a certain number of row activations.
Or interleave activations with refreshes. Say, after every 5 activations, refresh the next row in the refresh cycle.
I'm not a DRAM expert. They can figure it out. I promise if you refresh the whole chip after every row activation you won't have rowhammer. It'll be too slow though. Somewhere in between is the fastest point where there isn't rowhammer.