Can Substrate disrupt ASML using particle acceleration? • Hacker News Board

Re: Can Substrate disrupt ASML using particle acceleration?

#11

Post by dreamcompiler » Fri, Oct 31, 2025, 2:15 PM UTC

LargoLasskhyfv wrote: post #4

czarv20 wrote: post #3

I don’t have a times subscription but this looks to be Xray lithography using a synchrotron to produce the X-rays? Can anyone confirm?

https://archive.ph/xKqnk There is also this from out of China: https://pubs.aip.org/aip/app/article/10/8/086105/3357991/Ele... Via: https://phys.org/news/2025-10-electrohydrodynamics-machine-e... Not to forget https://global.canon/en/technology/nil-2023.html , https://www.usa.canon.com/shop/business/semiconductor/lithog... which recently went online in https://www.tomshardware.com/tech-industry/canon-delivers-fi... ,…

That searchforthenext link shows an illustration captioned "Conventional CMOS unipolar NOR gate."

It's actually a NAND gate. Seems like a pretty big red flag if they want to revolutionize transistors but they can't even get super basic stuff right.

Re: Can Substrate disrupt ASML using particle acceleration?

#12

Post by dreamcompiler » Fri, Oct 31, 2025, 2:24 PM UTC

For those who don't know, ASML didn't invent EUV lithography. It was invented in the US, paid for largely by the US government, and licensed to ASML for commercialization.

https://en.wikipedia.org/w/index.php?title=ASML_Holding&sect...

Re: Can Substrate disrupt ASML using particle acceleration?

#13

Post by ycui1986 » Sun, Nov 02, 2025, 12:20 AM UTC

If anything, the most complicated problem in lithography is not EUV at all. The hardest problem is the overlay mismatch. ASML had spent decades minimizing overlay mismatch. A new player in semiconductor may claim to master EUV, or X-Ray or contact printing, but everyone must solve the overlay mismatch problem. That is no more easier than the EUV part.