While interesting this approach is not any faster than the Ge based photodiodes that we have currently. State of the art is ~-110GHz in Germanium Si photonics using standard fabs. This is only 50GHz.
"the signal state transitions were established at less than 20 ps, which is comparable to the bandwidth limit of the oscilloscope utilized at 50 GHz. [...] the initial rise time constant may be shorter than the measurement limits of the oscilloscope."